Design of Microwave Power Amplifier at 2300 MHz Using S-parameters for Satellite Applications

This paper proposes to design microwave power amplifier with center frequency 2300 MHz using S-parameters. The paper takes all the representation of design by theoretical calculations of main parameters to gives right way for design before to use the computer aided design-CAD to know the right calculations to have an accurate result and how to select the efficient transistor with specifications to avoid the noise. The design has been using the low noise transistor NE02135 made by NEC company with 10 v of collector to emitter voltage and lower collector current of 20 mA as a bias point and its S-parameters. The conditions of unconditional Stability realized from the value of stability factor greater than 1 is 1.07 and Delta smaller than 1 is 0.102 from calculations and the maximum available gain is 11.2 dB that’s give the value of figure of merit efficient to indicate the correct design.